Samples which were N-doped to various levels were exposed to a H or D plasma. Secondary ion mass spectroscopy revealed that the H or D profiles exactly matched the N profiles in all of the samples; regardless of the plasma exposure conditions. All of the samples were semi-insulating after H or D exposure. Photoluminescence spectroscopy showed that the deep compensating donor was N-related. The results also confirmed that the main shallow compensating donor was a N-related defect.

Hydrogen/Deuterium: a Probe to Investigate Carrier-Compensation in ZnSe:N. E.Tournié, H.Pelletier, G.Neu, B.Theys, A.Lusson, M.Teisseire, C.Chauvet, J.P.Faurie: Journal of Crystal Growth, 2000, 214-215, 507-10