Precise measurements were made of the lattice parameters of undoped and impurity-doped single crystals by using the Fewster method. The lattice parameter of undoped crystals was equal to 0.566919nm, and it remained unchanged after Zn-treatment at 1000C. On the other hand, an increase in the lattice parameter was observed in I-doped samples; and this depended upon the Zn-treatment temperature. An increase in lattice parameter also occurred in Al-doped ZnSe. The results suggested that I and Al impurities here played an important role in point defect formation, during and after Zn heat treatment.

The Effect of (Al,I) Impurities and Heat Treatment on Lattice Parameter of Single-Crystal ZnSe. H.Udono, I.Kikuma, Y.Okada: Journal of Crystal Growth, 2000, 214-215, 889-93