Photoluminescence measurements were performed under high magnetic fields, in the Faraday configuration, on N-doped molecular beam epilayer structures in order to study impurity centres in the compensation limit. Depending upon the N concentration, various regimes of the field dependence of the donor-acceptor pair transitions were observed. The wave function shrinkage model gave the mean distance between impurity centres as being the critical parameter of this feature. Transitions which were related to excitons that were bound to shallow and deep acceptors were also considered. Their field dependences were observed to be directly connected to the N doping density, and implied the existence of differing capture rates which depended upon the nature of the neutral impurity.

Magneto-Optics on p-Type ZnSe Epilayers: the Dependence on the Nitrogen Doping Concentration. L.Gravier, H.Makino, K.Arai, H.Sasaki, K.Kimura, S.Miwa, T.Yao: Journal of Crystal Growth, 2000, 214-215, 581-4