Epitaxial layers of P-implanted and plasma-doped material, grown by means of molecular beam epitaxy, were studied by using photoluminescence, selective photoluminescence and photoluminescence-excitation spectroscopies. It was shown that, with an activation energy of 0.085eV, the P-related shallow acceptor level was the shallowest acceptor ever detected in this material. The series of excited states of this acceptor revealed that it behaved like all substitutional acceptors. It was thereby identified as being the simple PSe substitutional impurity. Its excitonic emission definitely occurred at 2.791eV. Negligible P-related deep levels could be detected by photoluminescence. However, a line which was relatively strongly coupled to phonons was detected at 2.796eV. This line arose from P-related defects which involved P incorporated on other-than-Se substitutional sites. A lack of conductivity of the samples, which did not arise from deep defects, was attributed to an AX-like behavior of the P impurity.

Spectroscopy of the Phosphorus Impurity in ZnSe Epitaxial Layers Grown by Molecular-Beam Epitaxy. G.Neu, E.Tournié, C.Morhain, M.Teisseire, J.P.Faurie: Physical Review B, 2000, 61[23], 15789-96