Pairs of bright spots were observed in microphotoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. These pairs were aligned exactly parallel to the [110] or [¯110] directions. Atomic-force microscopy and plan-view transmission electron microscopy revealed that the bright emission spots were related to pairs of stacking faults. An enhanced radiative recombination was the result of exciton localization in the region where the stacking faults intersected the quantum wells. Cross-sectional transmission electron microscopy and microphotoluminescence spectroscopy showed that, in the case of Frank-type stacking faults (oriented along [110]), the wells were enlarged by up to 12 bilayers. Exciton localization was much shallower in the case of Shockley-type stacking-fault pairs which were oriented along [¯110].

Stacking-Fault Induced Pairs of Localizing Centres in ZnSe Quantum Wells. D.Lüerssen, R.Bleher, H.Kalt, H.Richter, T.Schimmel, A.Rosenauer, D.Litvinov, A.Kamilli, D.Gerthsen, B.Jobst, K.Ohkawa, D.Hommel: Journal of Crystal Growth, 2000, 214-215, 634-8