Single crystals were grown from n-type material by using a solid-phase recrystallization method. During the latter process, twinned regions appeared which had different electronic recombination properties. Recrystallization was performed under Ar or Se atmospheres, with various pressures, in order to investigate the effect of the growth conditions. The recombination properties were studied by means of cathodoluminescence and remote electron beam-induced current techniques. Wavelength-dispersive X-ray mapping was also performed in order to analyze any differences in stoichiometry that were related to the presence of extended defects.

Scanning Electron Microscopy Study of Twins in ZnSe Single Crystals Grown by Solid-Phase Recrystallization. A.Urbieta, P.Fernandez, J.Piqueras, V.Muñoz: Materials Science and Engineering B, 2001, 80[1-3], 130-3