Thin films of ZnSe, grown onto GaAs(001) substrates by means of molecular beam epitaxy (to a thickness of 250nm), were studied by using transmission electron microscopy. Three types of structural defect were observed. These were isolated or paired triangle-shaped stacking faults (with the apex close to the interface) that were bounded by 2 different Shockley dislocations, stacking faults that were generated at the surface of the ZnSe epilayer by the movement of a Shockley half-loop, and an array of perfect misfit dislocations with Burgers vectors which were inclined with respect to the interface. Most of them lay in <310> directions, but only a few were parallel to <110>.

Transmission Electron Microscopy Study of Crystal Defects in ZnSe/GaAs(001) Epilayers. S.Lavagne, C.Levade, G.Vanderschaeve, J.Crestou, E.Tournié, J.P.Faurie: Journal of Physics - Condensed Matter, 2000, 12[49], 10287-93