Nominally undoped crystals were implanted with radioactive 111Ag, which decayed to 111Cd, and were investigated by means of photoluminescence spectroscopy. Photoluminescence lines which were caused by an acceptor level at 0.121eV were observed. These were the principal bound exciton line, the donor-acceptor pair band and the 2-hole transition lines. Because the intensities of all of these photoluminescence lines decreased in parallel with the half-life (178.8h) of 111Ag, both acceptor levels were concluded to be associated with defects which contained a single Ag atom. Therefore, previous suggestions that these were due to substitutional Ag on Zn lattice sites were confirmed. On the other hand, the suggestions that the S1, S2 and S3 lines were due to Ag-related defect complexes were not confirmed.

Identification of Ag-Acceptors in 111Ag/111Cd Doped ZnTe and CdTe. J.Hamann, A.Burchard, M.Deicher, T.Filz, S.Lany, V.Ostheimer, F.Strasser, H.Wolf, Isolde, T.Wichert: Journal of Crystal Growth, 2000, 214-215, 207-11