Auger electron spectroscopy and secondary ion mass spectroscopy were used to characterize the compositions of ZnTe films, and transmission electron microscopy was used to investigate the lattice mismatch and microstructural properties of ZnTe/GaAs heterostructures. The Auger electron spectroscopic and secondary ion mass spectroscopic results showed that the ZnTe/GaAs hetero-interfaces had relatively sharp interfaces. The transmission electron microscopic images and the selected-area electron diffraction patterns revealed a large lattice mismatch between ZnTe epitaxial layers and GaAs substrates. There were 60° and 90° dislocations, together with stacking faults, near to the ZnTe/GaAs hetero-interfaces. A ZnTe epitaxial film which was grown on a GaAs substrate suffered a compressive strain of -0.61%, and the possible atomic arrangements of 60° and 90° dislocations were deduced on the basis of high-resolution transmission electron microscopic results.

Strain Effects and Atomic Arrangements of 60° and 90° Dislocations near the ZnTe/GaAs Heterointerface. T.W.Kim, D.U.Lee, H.S.Lee, J.Y.Lee, H.L.Park: Applied Physics Letters, 2001, 78[10], 1409-11