It was recalled that in situ transmission electron microscopic straining experiments provided a unique means for the real-time investigation of the behaviour of individual dislocations under an applied stress. Results which had been obtained for various semiconductors were presented here. Numerous dislocation sources were observed, and this made it possible to measure the dislocation velocity as a function of parameters such as the local shear stress, temperature, dislocation type and length. The experimental results were consistent with dislocation glide being governed by the Peierls mechanism; even in the case of II-VI compounds, which exhibited a significant degree of ionic character. In the case of compounds, a linear dependence of the dislocation velocity upon the length of the moving segment was noted. A transition between a length-dependent and a length-independent velocity regime was observed in elemental semiconductors. When analysed within the framework of the Hirth-Lothe kink diffusion model, these results permitted the estimation of kink formation and migration energies. The dislocation behaviour of various semiconductors was sensitive to electronic excitations. A marked increase (radiation-enhanced dislocation glide) in dislocation mobility was observed with increasing electron beam intensity. This was attributed to a lowering of the lattice friction, due to the non-radiative recombination of electronic carriers at dislocation sites.

Transmission Electron Microscopy in situ Investigation of Dislocation Mobility in Semiconductors. G.Vanderschaeve, C.Levade, D.Caillard: Journal of Physics - Condensed Matter, 2000, 12[49], 10093-103