It was noted that, during the relaxation of strained semiconductor layers, gliding threading dislocations could be blocked by pre-existing misfit dislocations which were perpendicular to the glide direction. It had been suggested that this process was less significant when the layer was grown onto an off-cut (vicinal) substrate. A statistical analysis of simpler cases, and a computer simulation of more complex cases, showed that there should be no difference between the blocking behaviours on exact or off-cut substrates.

A Model of Dislocation Blocking and its Application to the Development of Misfit Dislocation Arrays. P.J.Goodhew: Philosophical Magazine A, 2000, 80[9], 2099-108