Collision cascades which were produced by 25, 40 or 50eV Ar or Xe ions, normally incident at the (100) surface at 300K were simulated by using the molecular dynamics technique. It was demonstrated that the numbers of surface and bulk vacancies which formed in cascades, under bombardment of the (100) surface by Xe ions, exhibited maxima at 0.2 to 0.3 and 0.7 to 1.0ps after cascade initiation. The number of vacancies which was generated under bombardment with Ar ions exhibited a single maximum within 0.2 to 0.3ps of cascade initiation.

Molecular Dynamics Simulation of Defect Formation in an Aluminium Crystal under Low-Energy Ion Bombardment. G.V.Kornich, G.Betz, A.I.Bazhin: Physics of the Solid State, 2001, 43[1], 29-34