The resistance degradation of metallic strips, due to electromigration, was studied using a percolative approach which was based upon a random resistor network. Defect generation, and recovery driven by a current stress, were considered. The main features of experiments performed on Al-0.5%Cu lines were well-produced; thus providing a unified description of the degradation processes in terms of physical parameters.

A Percolative Simulation of Electromigration Phenomena. C.Pennetta, L.Reggiani, G.Trefan, F.Fantini, I.De Munari, A.Scorzoni: Microelectronic Engineering, 2001, 55[1-4], 34-53