Molecular dynamics methods were used to model the collision-induced cascades which were generated by the normal bombardment of a (100) crystal with Ar and Xe ions (25, 40 or 50eV), as well as with 15eV Xe ions, at 300K. Time-dependences were deduced for the formation of vacancies and interstitial atoms as a function of crystal depth, and of radiation-adsorption adatoms on the surface during cascade development. The adatoms were shown to contribute appreciably to the change in root-mean-square atomic displacement in the thermal stage of the cascade. It was proved that Ar ions produced more adatoms on the surface, while Xe ions did so in the bulk of the crystal - below the first atomic layer - and led to more effective mixing in the [100] direction.

Modelling of Atomic Displacements in the Bombardment of Copper by Ar and Xe Ions with Near Sputtering-Threshold Energies. G.V.Kornich, G.Betz, A.I.Bazhin: Russian Physics Journal, 2000, 43[10], 860-6