The Cowern model for simulating the transient enhanced diffusion of dopants and the interaction of self–interstitials with extended defects following ion implantation, was considered. The model took account of the formation of {113} defects via small self–interstitial clusters. This continuum approach, based upon experimental results, normally consisted of solving a large set of coupled differential equations and led to lengthy simulation times. A simplified model, based upon just 7 differential equations, was shown here to lead to almost identical results when compared with those of the original model.

A Reduced Approach for Modelling the Influence of Nanoclusters and {113} Defects on Transient Enhanced Diffusion. D.Stiebel, P.Pichler, N.E.B.Cowern: Applied Physics Letters, 2001, 79[16], 2654-6