Atomic-scale simulations of the diffusion and agglomeration of point defects under high-energy electron irradiation were carried out by using Monte Carlo techniques. It was assumed that vacancy-interstitial pairs were created by particle impacts. The diffusion of point defects through the solid, and their association, created nuclei for new dislocation loops. The incorporation of interstitials into pre-existing dislocation loops led to their growth. The concentrations of point defects and extended defects, and size of the latter, were determined and compared with the results of chemical reaction-rate theory and experimental data. The spatial distributions of extended defects and point defects were studied, and it was found that the spatial distribution of vacancies around extended defects reduced their further growth.

Atomic Scale Simulation of Extended Defect Formation under High Energy Electron Irradiation - Space Distribution. A.Amghar, M.Djafari-Rouhani, H.Idrissi-Saba, A.M.Gué, D.Estève: Physica B, 2001, 304[1-4], 368-76