The depth profiles of D atoms and D2 molecules, in a single crystal which was implanted with 6keV D ions at 300K, were determined by using secondary ion mass spectrometry and residual gas analysis measurements during surface sputtering. The D profiles and lattice damage, in a single crystal which was irradiated with 10keV D ions at 300K, were investigated by means of nuclear reaction analysis and Rutherford back-scattering spectrometry combined with ion channelling. It was found that there were at least 2 types of ion-induced defect which were responsible for D-trapping. One type comprised D2-filled micro-voids which were localized in the implantation zone. The other type comprised dislocations which were distributed from the surface, to depths that were far greater than 1μm, and which captured D in the form of atoms.

Deuterium Retention and Lattice Damage in Tungsten Irradiated with D Ions. V.K.Alimov, K.Ertl, J.Roth: Journal of Nuclear Materials, 2001, 290-293, 389–93