The effect which dopants and defects, related to ion-implantation or to interlayer strain, had upon the diffusion of light elements was studied. The depth profiles of implants were measured, using secondary ion mass spectrometry, in various types of diamond substrate (undoped, doped, defect-free, defect-containing) before and after annealing at various temperatures. Implantation-related residual defects were suggested to inhibit (presumably via the formation of very stable immobile complexes) the diffusion of these impurities. Complexes of D-defects disintegrated suddenly at about 1300K. Ion-implanted B diffused slightly above 1300K.

Inhibition of Light Element Diffusion in Diamond due to Ion Implantation Related Defects. B.Fizgeer, C.Uzan-Saguy, C.Cytermann, V.Richter, I.Avigal, M.Shaanan, R.Brener, R.Kalish: Physica Status Solidi A, 2001, 186[2], 281-9