Marked differences were found, via secondary ion mass spectrometry depth profiling and Hall-effect measurements, in the diffusion of D in samples which had been B-doped by ion implantation or during homoepitaxial film growth. Type-IIa natural diamond which had been B-implanted, and high-quality homo-epitaxial B-doped films, were subjected to D-plasma treatment under similar conditions. The results clearly showed that there was a huge difference in the D diffusion profiles for these 2 types of sample. Those which were doped during growth were completely deuterated, while implanted ones exhibited only slight D penetration. Electrical measurements indicated that, whereas the homoepitaxial samples became non-insulating, or exhibited a sharp decrease in their free hole concentrations following deuteration, identical treatment of B-implanted samples caused only slight changes in the electrical properties. The latter, and their dependence upon annealing, were correlated with D diffusion. A possible mechanism, involving (B, H) and (defect, H) pair formation, was suggested as being an explanation of the observed differences.

Hydrogen Diffusion in B-Ion Implanted and B-Doped Homoepitaxial Diamond - Passivation of Defects versus Passivation of B Acceptors. C.Uzan-Saguy, A.Reznik, C.Cytermann, R.Brener, R.Kalish, E.Bustarret, M.Bernard, A.Deneuville, E.Gheeraert, J.Chevallier: Diamond and Related Materials, 2001, 10[3-7], 453-8