Type-IIa diamond crystals were subjected to cold-implantation and rapid annealing at 1050C, and ex situ annealing at 1400C, and were investigated using electron spin resonance measurements. The electron spin resonance spectra of cold-implanted and rapidly annealed, and post-annealed, samples included an isotropic line at g = 2.003, a set of anisotropic hyperfine lines and a pair of isotropic hyperfine lines which were centered at g = 2.003 (with ΔH = 28G). The intensity of each signal increased with the implantation dose. Following the second annealing step, the intensities of all of the signals was reduced; except for the ΔH = 28G center, which increased. This signal was attributed to a new center which was related to P and was probably the neutral substitutional form.

Phosphorus Site after CIRA Implantation of Type-IIa Diamond. N.Casanova, E.Gheeraert, A.Deneuville, C.Uzan-Saguy, R.Kalish: Diamond and Related Materials, 2001, 10[3-7], 580-4