The microstructures of diamond single crystals, grown from the Ni-C system under high-temperature and high-pressure conditions, were examined by using transmission electron microscopy. It was shown that there were growth defects such as micro-inclusions, dislocation networks and arrays of dislocations and dislocation pile-ups. The formation and characteristics of the defects were analyzed. The micro-inclusions were composed of hexagonal Ni3C, hexagonal SiO2 and amorphous graphite. The dislocations were related to internal stresses which arose from micro-inclusions.

TEM Investigation of Micro-Inclusions and Dislocations in a HPHT-Grown Diamond Single Crystal from Ni-C System. L.W.Yin, Z.D.Zou, M.S.Li, G.L.Geng, D.S.Sun, Z.Y.Hao, Z.Y.Yao: Crystal Research and Technology, 2000, 35[11-12], 1289-94