Experimental evidence concerning the selective B-doping of 6H–type material by diffusion was considered. Selective diffusion was achieved at 1800 to 2100C by using graphite films as masks. Cathodoluminescence and anodic oxidation techniques were used to identify the locally doped regions.

Doping of 6H–SiC by Selective Diffusion of Boron. S.I.Soloviev, Y.Gao, T.S.Sudarshan: Applied Physics Letters, 2000, 77[24], 4004-6