The structures and kinetics of B-related defects were investigated by using an ab initio method. Attention was focussed on the stability of the substitutional B impurities and their migration. It was demonstrated that interstitials and C vacancies played a predominant role in the migration of substitutional B.

Boron in SiC - Structure and Kinetics. M.Bockstedte, A.Mattausch, O.Pankratov: Materials Science Forum, 2001, 353-356, 447-50