The intrinsic defects which were generated by electron irradiation at energies of the order of the Si displacement threshold of 6H-samples were investigated by means of electron resonance spectroscopy. In the case of p-type Al-doped material, 2 main intrinsic defects were observed and were attributed to Si Frenkel pairs, VSi—Si, and C monovacancies, VC+. In the case of n-type material, a different defect with an electron spin of ½ was observed. The spectrum was characterized by an unusual superhyperfine interaction, with 6 equivalent Si neighbours and (3+1) equivalent C neighbours of equal magnitude. The C superhyperfine interaction could be determined only by the use of 13C-enriched samples. This defect was tentatively suggested to be the VSi3--Si pair center.

Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold. H.J.Von Bardeleben, J.L.Cantin, P.Baranov, E.N.Mokhov: Materials Science Forum, 2001, 353-356, 509-12