Intrinsic defects in p-type Al-doped 6H-type material were generated by electron irradiation at 300keV (close to the threshold value for Si atom displacement), and were studied by means of electron paramagnetic resonance spectroscopy. Two dominant irradiation-induced paramagnetic defects were observed. One was a Si vacancy-related S = 3/2 defect with a zero-field splitting of 6.87 x 10-3/cm. It was tentatively attributed to a Si Frenkel pair that was aligned parallel to the c-axis. The other was a C vacancy-related S = ½ defect which had previously been attributed to VC+. A slight increase in the electron energy, to 350keV, created a lower-symmetry S = 3/2 spectrum which could be attributed to Si Frenkel pairs; with the interstitial being located at 6 equivalent off-axis sites. High-energy (2 MeV) irradiation created only isolated Si vacancies, with no zero-field splitting,

Vacancy Defects in p-Type 6H-SiC Created by Low-Energy Electron Irradiation. H.J.Von Bardeleben, J.L.Cantin, L.Henry, M.F.Barthe: Physical Review B, 2000, 62[16], 10841-6