Classical molecular dynamics simulations were used to investigate elementary ion-beam-induced defect production in 3C- and 4H-type samples. A modified Tersoff potential was used to model the interactions between atoms. The threshold primary knock-on atom energy for defect formation, as well as the final defect configuration and its formation energy, were determined for the case where the C and Si primary knock-on atoms started out parallel or anti-parallel to the [00•1] direction. The elementary defects which were observed in the 3C- and 4H-type samples differed significantly, whereas the corresponding threshold primary knock-on atom energies and the formation energies of the configurations tended to be similar. In the case of 4H-type material, new sites for C and Si interstitials were found. One site was situated between two C3Si3 hexagonal rings, and the other was between a C3 and an Si3 trigonal ring.

Influence of Polytypism on Elementary Processes of Ion-Beam-Induced Defect Production in SiC. M.Posselt, V.Belko, E.Chagarov: Nuclear Instruments and Methods in Physics Research B, 2001, 180[1-4], 17-22