Deep centers in n-type 4H– and 6H–type samples were bombarded with 8MeV protons and were investigated by means of capacitance spectroscopy and electron paramagnetic resonance techniques. Samples were fabricated by sublimation epitaxy, or were commercially produced. It was shown that the bombardment of wide-bandgap semiconductors could lead to an increase in the concentration of uncompensated donors in an n-type material. The spectrum of deep centers in both polytypes was independent of the material-growth technology and the type of charged particle. However, the parameters and behavior of the radiation defects were different in 6H– and 4H–type samples. The possible natures of the bombardment-induced centers was deduced from the annealing behavior and electron paramagnetic resonance data.

Doping of n-Type 6H–SiC and 4H–SiC with Defects Created with a Proton Beam. A.A.Lebedev, A.I.Veinger, D.V.Davydov, V.V.Kozlovski, N.S.Savkina, A.M.Strelchuk: Journal of Applied Physics, 2000, 88[11], 6265-71