The substitutional site of implanted Ga in (1¯1•0)-oriented 6H material was investigated by using the preferential scattering effect of He ions. The Si and C monatomic strings were preferentially observed by performing angular scans across <1¯1•0> axial channels which were parallel to the (11•0) plane. The 400keV Ga ions were implanted, to a dose of 5 x 1015/cm2, through 200nm-thick SiO2 at room temperature. In the case of annealed (1200C, 0.5h) samples, the implanted Ga impurities were located preferentially on Si sub-lattice sites rather than on C sub-lattice sites.

Preferential Ion Scattering from 6H-SiC: Identification of the Substitutional Site of Implanted Ga Impurities. M.Satoh, Y.Nakaike, K.Kuriyama: Journal of Applied Physics, 2001, 89[1], 61-5