Defects which were created by the proton bombardment of n-type 4H- epilayers, using various fluences (and 6 annealing steps), were investigated by means of deep level transient spectroscopy and minority carrier transient spectroscopy. Three previously unreported hole traps, with energy levels of Ev+0.35, Ev+0.44 and Ev+0.80eV (plus several electron traps), were found. The high-temperature stability of an Ev+0.35eV was demonstrated.

Proton Irradiation-Induced Defects in 4H-SiC. L.Strorasta, F.H.C.Carlsson, S.G.Sridhara, D.Aberg, J.P.Bergman, A.Hallen, E.Janzen: Materials Science Forum, 2001, 353-356, 431-4