The optical and structural properties of ion-implanted 6H-type single crystals were investigated by using samples which had been implanted with 370keV 28Si ions, to doses ranging from 5 x 1013 to 1016/cm2, at 20 to 600C. Rutherford back-scattering spectrometry channelling data showed that dynamic recovery of the induced-damage layer increased with irradiation temperature. The final disorder as deduced from Rutherford back-scattering spectrometry channelling data, as a function of implantation temperature, was modelled in terms of a thermally activated process and yielded an activation energy of 0.08eV. The defect distributions were found to shift to greater depths with increasing implantation temperature and dose. Some defects were found beyond the accessible range of the implanted ions. Rutherford back-scattering spectrometry channelling data on high-temperature implantation also suggested that defect complexes were created at high doses, in addition to the point defects which were still stable at high temperatures. A decrease in the Raman intensity of implanted samples, relative to that of crystalline samples, was observed and was correlated with an increase in optical absorption near to the wavelength (514.5nm) of the laser pump.

Role of Implantation Temperature in Residual Damage in Ion-Implanted 6H-SiC. R.Héliou, J.L.Brebner, S.Roorda: Semiconductor Science and Technology, 2001, 16[10], 836-43