The structural properties of ion-implanted 6H-type single crystals were investigated after implantation with 370keV 28Si ions, to doses ranging from 5 x 1013 to 1 x 1016/cm2, at 20 to 600C. Rutherford back-scattering spectrometry channelling showed that dynamic recovery of the induced-damage layer increased with temperature. The final disorder, as a function of implantation temperature, was modelled in terms of a thermally activated process. This yielded an activation energy of 0.08eV. Rutherford back-scattering spectrometry channelling data on high-temperature implantation also suggested that defect complexes were created at high doses, in addition to point defects which were still stable at high temperatures. A decrease in the Raman intensity of implanted samples, relative to that of crystalline samples, was observed and correlated with an increase in optical absorption near to the wavelength of the laser pump (514.5nm).

Optical and Structural Properties of 6H-SiC Implanted with Silicon as a Function of Implantation Dose and Temperature. R.Heliou, J.L.Brebner, S.Roorda: Nuclear Instruments and Methods in Physics Research B, 2001, 175-177[1-4], 268-73