A theoretical model was developed which permitted the description of defect evolution in this material when implanted with high doses of N and Al ions and annealed to form a solid solution. The diffusion of defects, the formation of complexes of defect clusters, and the effect of internal elastic stress fields produced by the implanted ions and complexes formed, were taken into account. The results of the simulations were correlated with data obtained by means of Rutherford back-scattering spectrometry channelling.

Theoretical and Experimental Investigations of Defect Evolution in Silicon Carbide during N+ and Al+ Ion Implantation Taking into Account Internal Stress Fields. P.V.Rybin, D.V.Kulikov, Y.V.Trushin, R.A.Yankov, M.Voelskow, F.Scharmann, J.Pezoldt: Nuclear Instruments and Methods in Physics Research B, 2001, 178[1-4], 269-74

[