Ion-beam induced disordering was investigated in single crystals of 6H-type material by using ion-channelling methods. Dynamic defect recovery processes increased with increasing irradiation temperature. The amorphization of SiC was consistent with a combined direct-impact and defect-stimulated process. Three recovery stages were observed on both the Si and C sub-lattices during the isochronal annealing of Au2+-irradiated samples.

Ion Implantation and Thermal Annealing in Silicon Carbide and Gallium Nitride. W.Jiang, W.J.Weber, S.Thevuthasan: Nuclear Instruments and Methods in Physics Research B, 2001, 178[1-4], 204-8