Nanopipe/dislocation-related defects in wafers were characterized by using a ballistic electron emission microscopic technique. The dual mode of the latter technique was shown to provide insight into the nature of these defects in the carbide. The presence of an excess of carrier density at the dislocation site, and its impact upon device characteristics in terms of junction breakdown, was considered with regard to the experimental results.

Characterization of Nanopipes/Dislocations in Silicon Carbide using Ballistic Electron Emission Microscopy. C.V.Reddy, V.Narayanamurti: Journal of Applied Physics, 2001, 89[10], 5797-9