An ab initio method was used to study the diffusion of intrinsic defects in 3C-type material, and the structures and energetics of the relevant transient complexes were calculated. Possible migration paths, and the corresponding barriers to self-diffusion, were proposed.

Self-Diffusion in SiC - the Role of Intrinsic Point Defects. A.Mattausch, M.Bockstedte, O.Pankratov: Materials Science Forum, 2001, 353-356, 323-6