Recent findings concerning the pseudodonor nature of the DI defect were used to establish an energy-level scheme in the band-gap for the defect. This predicted the existence of a hole trap at about 0.35eV above the valence band. By using minority carrier transient spectroscopy, it was proved that the DI defect was related to such a hole trap. It was also shown that the DI defect was not related to the Z1/2 electron trap; contrary to previous reports.

Pseudo-Donor Nature of the D1 Defect in 4H-SiC. L.Storasta, F.H.C.Carlsson, S.G.Sridhara, J.P.Bergman, A.Henry, T.Egilsson, A.Hallén, E.Janzén: Applied Physics Letters, 2001, 78[1], 46-8