Epitaxial layers of Si0.984C0.016 were synthesized by using ion implantation and solid-phase epitaxy, and the loss kinetics of substitutional C were investigated. It was found that, as the annealing temperature and time were increased, more and more C atoms diffused from substitutional to interstitial sites. The activation energy for the loss of substitutional C, to interstitial sites, was deduced at 700 to 1040C by using high-resolution X-ray diffraction and Fourier-transform infra-red spectroscopy. Both methods yielded similar activation energies (about 3eV) for the loss kinetics. Solid-phase epitaxial layers which were re-grown by rapid thermal annealing had a better crystalline quality than did those which were re-grown by furnace annealing.

The Loss Kinetics of Substitutional Carbon in SiC Re-Grown by Solid-Phase Epitaxy. Y.J.Kim, T.J.Kim, T.K.Kim, B.Park, J.H.Song: Japanese Journal of Applied Physics - 1, 2001, 40[2A], 773-6