The properties of SiC-film/Si-substrate structures which were annealed in a H atmosphere were investigated by means of scanning electron microscopy, X-ray diffraction measurements and Auger electron spectroscopic analysis. Two types of defect, line and point, which were formed during vacuum annealing were also observed in SiC/Si structures which were annealed in a H atmosphere. The density of the point defects was low.

Improvement of Annealing Properties of SiC/Si Structures. Y.Sun, T.Miyasato: Japanese Journal of Applied Physics - 2, 2000, 39[5A], L396-9