Electron paramagnetic resonance was used to study 2 intrinsic defects in oxidized epitaxial layers of 3C–type material. One center could be described by an isotropic g-value of 2.0044. The defect exhibited a marked temperature dependence, and was distributed throughout the 3C epitaxial layer. Although the detailed structure was not determined, the g-value was consistent with theoretical predictions for a Si dangling bond which was surrounded by C atoms. The second Si-related center, which was produced by post-oxidation dry heat-treatment, was characterized by an axial g-tensor with g|| = 2.0023 and g = 2.0082. The spectroscopic and chemical properties of the latter defect were consistent with those of the Pb center. That is, a Si dangling bond which was located at a Si/insulator interface. Experiments showed that, in the present 3C samples, the Pb signal was probably located on the Si side of a SiO2/Si interface between the SiC epilayer and the Si substrate.

Intrinsic Point Defects in Oxidized 3C Epitaxial Layers on Si Substrates. P.J.Macfarlane, M.E.Zvanut, G.M.Janowski: Journal of Applied Physics, 2001, 89[2], 955-9