Remote electron beam induced current measurements were used to investigate electrically active regions in Si-doped films. Remote electron beam induced current bright-dark contrast was observed in the borders of round or pyramidal hillocks, while pyramidal hillocks also exhibited a bright contrast at the center. The results were explained in terms of an inhomogeneous distribution of charged point defects and impurities at the hillocks.

Study of Growth Hillocks in GaN:Si Films via Electron Beam Induced Current Imaging. M.H.Zaldivar, P.Fernández, J.Piqueras: Journal of Applied Physics, 2001, 90[2], 1058-60