Ion-beam induced disordering was investigated in monocrystalline films by using ion-channelling methods. The amorphization of GaN required a dose that was some 30 and 100 times higher than that for SiC, at 180 and 300K, respectively. Dynamic defect recovery processes increased with increasing irradiation temperature. An intermediate saturation state was observed for disordering at the damage peak. This suggested the operation of enhanced defect annihilation processes. Implanted Au diffused towards the surface during implantation at 300K, and underwent further diffusion into the amorphous surface layer during post-implantation annealing at 870K.

Ion Implantation and Thermal Annealing in Silicon Carbide and Gallium Nitride. W.Jiang, W.J.Weber, S.Thevuthasan: Nuclear Instruments and Methods in Physics Research B, 2001, 178[1-4], 204-8