It was noted that lattice-mismatch epitaxy produced a high concentration of dislocations in the interface region, and that this region was often highly conductive; due to donor-decoration of the dislocations. It was shown here that the simple rule, ND = α(Nd/c), predicted an almost constant low-temperature mobility; regardless of the Nd value. Here, c was the lattice constant, α was a constant of the order of 1 to 2, ND was the number of decorating donors and Nd was the number of dislocations.

Dislocation-Independent Mobility in Lattice-Mismatched Epitaxy: Application to GaN. D.C.Look, C.E.Stutz, R.J.Molnar, K.Saarinen, Z.Liliental-Weber: Solid State Communications, 2001, 117[10], 571-5