The depth profiles of implanted H atoms were measured in monocrystalline samples which had been bombarded at 923K using dual or triple beams of 0.25MeV H-, 0.6MeV He-, 2.4MeV O ions or 2.6MeV Al ions. Peaks occurred at 1.55 and 1.45μm in the depth profiles after H+Al dual-beam and H+O dual-beam implantation, respectively. The ratio of the peak areas was greater than 4. This was much larger than the implanted H-atom ratio of 1.1; thus indicating that implanted Al atoms suppressed the mobility of H atoms. Overall, the results indicated that implanted He atoms overwhelmed the effects of implanted self-cation/anion excess atoms upon the migration behaviours of implanted H and bombardment-induced point defects; leading to the observed sluggish cavity growth.

Effects of Co-Implanted Oxygen or Aluminium Atoms on Hydrogen Migration and Damage Structure in Multiple-Beam Irradiated Al2O3. Y.Katano, T.Aruga, S.Yamamoto, T.Nakazawa, D.Yamaki, K.Noda: Journal of Nuclear Materials, 2000, 283-287, 942-6