The white-beam synchrotron X-ray topographic technique was used to assess the quality of sapphire wafers which had been grown by using the heat-exchanger and modified Czochralski methods. The dislocation distribution, dislocation density and Burgers vectors of selected dislocations and stacking faults were studied. A correlation was established between the quality of the sapphire, and its performance as an X-ray back-scattering mirror.

Quality Assessment of Sapphire Wafers for X-Ray Crystal Optics using White Beam Synchrotron X-Ray Topography. W.M.Chen, P.J.McNally, Y.V.Shvydko, T.Tuomi, M.Lerche, A.N.Danilewsky, J.Kanatharana, D.Lowney, M.O’Hare, L.Knuuttila, J.Riikonen, R.Rantamaki: Physica Status Solidi A, 2001, 186[3], 365-71