The effect of annealing upon Nb-doped crystals, following Si-implantation, was investigated by means of secondary ion mass spectrometry. The implantation of 150keV Si ions, to a dose of 1016/cm2, was performed at room temperature. The Si depth profiles which were obtained, using secondary ion mass spectrometry, showed that annealing caused a plateau of 2.0 x 1019/cm3 to be created by Si diffusion at 1480C. The Si diffusivity was deduced from the distance to the plateau in the Si profiles, and its temperature dependence could be described by:

D (m2/s) = 1.5 x 10-6 exp[-398(kJ/mol)/RT]

Precipitates were formed by Si diffusion near to the surface.

Diffusion and Aggregation of Si Implant in (100) Single-Crystal SrTiO3. I.Sakaguchi, S.Hishita, H.Haneda: Nuclear Instruments and Methods in Physics Research B, 2001, 173[4], 436-40