Equilibrium calculations were made of the point-defect and electronic-carrier distributions in acceptor impurity containing thin films. Simulations were based upon previous calculations of near-grain boundary point-defect equilibrium in acceptor-doped SrTiO3 ceramics. Particular attention was paid to the effects of temperature, and of the presence of Pt electrode interfaces, upon the conditions for defect equilibrium. The local electrostatic potential, and the distributions of O vacancies across films of various thicknesses, were predicted for a number of simulated equilibration conditions.

Point Defect Equilibrium In Strontium Titanate Thin Films. P.C.McIntyre: Journal of Applied Physics, 2001, 89[12], 8074-84