A new stacking-fault formation mechanism was observed for the first time in these heteroepitaxial films. High-resolution electron microscopic studies, combined with electron diffraction and numerical image computation, suggested that the observed type-I1 intrinsic stacking faults in an epitaxial film could be formed as a result of tilting, of the lattices between films and substrate, required to maintain a particular orientation relationship.

New Source of Stacking Faults in Heteroepitaxial Systems. S.H.Lim, D.Shindo: Physical Review Letters, 2001, 86[17], 3795-8