Damage accumulation in stabilized cubic single crystals which had been bombarded with low-energy Ar ions was investigated by means of Rutherford back-scattering channelling and slow positron implantation spectroscopy. For fluences of 3 x 1014 to 1 x 1016/cm2, the damage-induced dechannelling parameter revealed 3 production stages (1, 2, 3) which had already been reported for ion-bombarded ceramics and been attributed to the formation of small clusters and dislocation loops; either isolated or overlapping. A new precursor stage was identified for fluences of below 3 x 1014/cm2. This stage (labelled 0) was confirmed by slow positron implantation spectroscopy and was attributed to the clustering of small vacancy-type defects. The 2 techniques exhibited differing sensitivities to defects, but similarities in the fluence dependence permitted the identification of unique limits to all of the observed damage production stages.

Precursory Stage Of Damage Production In Argon Irradiated Cubic Zirconia. J.Fradin, T.Thomé, R.I.Grynszpan, L.Thomé, W.Anwand, G.Brauer: Nuclear Instruments and Methods in Physics Research B, 2001, 175-177[1-4], 516-20