Spike thermal annealing was studied with respect to the electrical activation of B implants in 100nm Si films which had been deposited onto 1.5 to 2.4nm thermally-grown SiO2. Spike anneals were shown to yield higher carrier concentrations as compared with conventional rapid thermal annealing. The activation energy for B diffusion through SiO2 was found to be between 3.71 and 3.83eV (figure 4), and was near to the values found previously after furnace annealing. The B penetration appeared to be unaffected by photo-excitation arising from heating lamps.

Spike Annealing of Boron-Implanted Polycrystalline-Silicon on Thin SiO2. A.T.Fiory, K.K.Bourdelle, P.K.Roy: Applied Physics Letters, 2001, 78[8], 1071-3

Figure 4

Diffusivity of B in SiO2 Films