The buried-oxide layer of a SIMOX sample was implanted with 20 to 30keV D+ ions, to doses ranging from 1014 to 1016/cm2. Other samples were exposed to pure D gas (0 to 1MPa) at 800 to 1100K. Thermal desorption spectrometry revealed 2 main trapping sites for D in the buried oxide. One of them released D at about 900K, with an activation energy of about 2.5eV. The other released D at about 1250K, with an activation energy of about 3.4eV. They were attributed to the dissociation of Si-D and Si-OD groups, respectively. The first peak predominated in the implanted samples, while the other one predominated in samples which were exposed to D gas. The formation of Si-OD groups was a temperature-activated process. The trapping of D in the implanted samples was related to implantation-induced vacancy-like defects which were detected by means of positron beam analysis. Annealing (900K) led to complete defect recovery. Secondary ion mass spectrometric D profiling confirmed the occurrence of trapping in the defects.

The Behaviour Of Deuterium Incorporated Into The Buried Oxide Of SIMOX. A.Rivera, A.Van Veen, H.Schut, J.M.M.De Nijs, P.Balk, P.F.A.Alkemade: Nuclear Instruments and Methods in Physics Research B, 2001, 178[1-4], 287-90